Recessed Channel Ferroelectric-Gate Field-Effect Transistor Memory With Ferroelectric Layer Between Dual Metal Gates

In this study, we demonstrate a novel recessed channel ferroelectric field-effect transistor (FeFET) with gate metal/ferroelectric (FE) layer/inter-metal (IM)/interlayer (IL)/Si stacks, which can be called as dual metal gates recessed channel FeFET (DM-RFeFET), for nonvolatile memory applications with high performance and robust reliability. Through technology computer-aided design (TCAD) simulati...