GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art f T × L G Value

In this article, we report on demonstrating high-performance AlGaN/GaN high-electron-mobility-transistor (HEMT) on free-standing GaN (FS-GaN) substrate with low contact resistance ( ${R}_{C}$ ) and high breakdown voltage (BV). Non-regrowth ${R}_{C}$ as low...