A Backside-Illuminated Charge-Focusing Silicon SPAD With Enhanced Near-Infrared Sensitivity

Edward Van Sieleghem,Gauri Karve,Koen De Munck,Andrea Vinci,Celso Cavaco,Andreas Süss,Chris Van Hoof,Jiwon Lee

IEEE Transactions on Electron Devices（2022）

引用 7|浏览17

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摘要

A backside-illuminated (BSI) near-infrared (NIR)-enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2- $\boldsymbol {\mu }\text{m}$ -wide multiplication region with a spherically uniform electric field peak enforced by fi...

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关键词

Single-photon avalanche diodes,Cathodes,Electric breakdown,Silicon,Absorption,Detectors,Timing

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