Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters

The dilute-As InGaNAs-based quantum well (QW) active region and the corresponding large-overlap design is analyzed by using a self-consistent 6-band $k\cdot p$ method. Our study evaluates the optical transition energy, ground state electron-hole wavefunction overlap, and optical gain characteristics of a dilute-As InGaNAs QW consisting of a 3.3 nm thick In _0.19 Ga _0.81 N _0.94 As _0.06 well and 10 nm thick GaN barriers. The calculation suggests that the In _0.19 Ga _0.81 N _0.94 As _0.06 QW may result in a transition wavelength and optical gain comparable to a conventional 3.3 nm thick In _0.35 Ga _0.65 N QW, while preserving low In-content (~19%). In addition, a staggered dilute-As InGaNAs QW design with a modulated As-doping profile in the InGaNAs QW is presented, and the calculation results in a significantly enhanced wavefunction overlap and optical gain. This study reveals the excellent potential of the dilute-As InGaNAs semiconductor for application as a high efficiency active region material for future long wavelength emitters.