A Stacked Transistors CMOS SOI Power Amplifier For 5G Applications
2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)（2022）
摘要
A fifth-generation (5G) radio frequency power amplifier (PA) implemented in 45nm COMS SOI technology is presented. The design is based on a stack of six transistors divided into two cells, each with a common source and two common gate stages. The layouts of the three transistors in each cell are combined to reduce parasitic capacitances and improve the PA performance. Under 4.8 V power supply (0.8...
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关键词
Semiconductor device measurement,5G mobile communication,Layout,Power amplifiers,Capacitance,Transceivers,Silicon
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