Out-diffusion of Pd as part of degradation mechanisms in RF AlGaN-GaN HEMTs with Ni-Pd-Au Schottky contacts: part II

GaN high electron mobility transistors (HEMTs) on SiC substrates are produced for both commercial and defense applications that require high voltage, high power, and high efficiency operation. Although leading GaN HEMT manufacturers have reported excellent RF power characteristics and encouraging reliability, long-term reliability in the space environment remains a major concern due to unknown degradation mechanisms. For the present study, we continued to investigate degraded RF GaN HEMTs using micro-analytical techniques. Our RF AlGaN-GaN devices grown on SiC substrate had a Ni-Pd-Au Schottky gate length of 0.25 μm, a total gate width of 6 × 150 μm periphery, and a field plate. First, we performed DC bias-temperature stress tests on GaN HEMTs and some GaN HEMTs were thermally stressed as control samples. Second, we employed focused ion beam (FIB) to prepare TEM cross sections from degraded and control devices for defect analysis using a high resolution TEM. Pits, cracks, and pockets of palladium were found at the edge of the drain side of the gate. We report our detailed analysis results including our understanding on the out-diffusion of Pd as a potential degradation mechanism in our RF GaN HEMTs.