Fabrication and electroluminescence properties of alloyed CdSxSe1-x quantum dots-based LEDs

Abstract We report the facile synthesis of alloyed CdSxSe1-x QDs via one-pot method using simultaneous injection of Se and S source into a solution of the Cd precursor dissolved in a coordinating mixture of hexadecylamine and trioctylphosphine, during which the formation of CdSxSe1-x nanocrystals was controlled by growth time at a certain temperature of 260 oC. In particular, emission peak and full width at half maximum of photoluminescence (PL) of alloyed CdSxSe1-x QDs were tunable in a range of 588 - 604 nm and 36 - 38 nm, respectively, with a PL quantum yield up to 55 % by a reaction time of 60 min. Importantly, the structural advantage of alloyed CdSxSe1-x QDs based LEDs have been fabricated and their electroluminescence properties were characterized. A good performance device with a maximum luminance and luminous efficiency of 761 cd/m2 and 0.82 cd/A was obtained, respectively.