Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via In Situ Nanoimaging
conference on lasers and electro optics（2021）
摘要
Photoexcited Kelvin probe force microscope is used to image hot carriers excited in transition metal nitride-semiconductor heterostructures. Both hot holes are hot electron injections are revealed depending on the carrier types of the semiconductors.
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关键词
plasmon-induced charge transport,transition metal nitride-semiconductor interfaces,hot carriers,transition metal nitride-semiconductor heterostructures,hot holes,hot electron injections,in situ nanoimaging,photoexcited Kelvin probe force microscope,ZrN-TiO2:Nb,ZrN-TiO2:Cr
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