Drift Diffusion and Advance Hydrodynamic Simulation for the Design of Double-Gate SOI MOSFET in Nano-Scale Regime

As the size of transistors is decreasing day-by-day, overcoming the problem of short channel effects (SCEs) becomes a challenging task. In order to preventing the short channel effects gate and channel engineering have been introduced along with the innovations of structure. According to chronological growth in very large scale integration (VLSI) design, there exists a high demand for miniaturized, low power, high performance devices, which have directed the semiconductor industry towards development of non-conventional structures of MOSFET, such as Double Gate Silicon-On-Insulator (SOI) MOSFET. Consequently, the inclusion of carrier energy model for deep sub-micron devices during design simulation becomes an important aspect as the existing drift-diffusion model assumes the carrier energy close to the equilibrium state. In this paper, a Double Gate SOI MOSFET is designed in the nano-scale regime considering the requisite parameter to include quantum effects to reduce any SCEs. A comparative analysis of hydrodynamic model, which includes the carrier energy in simulation for the drive current, with drift diffusion model simulation is perform using Synopsis TCAD tool. It is observed that the advance hydrodynamic model is more accurate than the drift diffusion model in the nano-scale regime.