A terahertz 180° continuous phase shifter based on GaAs diode
international conference on infrared, millimeter, and terahertz waves（2021）
Abstract
This paper presents a single-segment phase shifter based on GaAs diode at 220 GHz. In this structure, a phase-shifting unit is inserted into the center of the rectangular waveguide surface. The state of the GaAs diode on the phase shifting unit is controlled by an external voltage. Then the equivalent impedance of the load branch is changed, resulting in phase shift. Finally, within 217.5GHz-225.5GHz, a continuous phase shift of 180° can be achieved, the insertion loss is less than 8.2dB and the phase shift difference between each state is about 22.5°.
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Key words
GaAs diode,single-segment phase,phase-shifting unit,rectangular waveguide surface,phase shifting unit,continuous phase shift,phase shift difference,terahertz continuous phase shifter,external voltage,equivalent impedance,load branch,frequency 217.5 GHz to 225.5 GHz,GaAs
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