650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

Kailun Zhong,Yuru Wang,Gang Lyu,Jin Wei,Jiahui Sun,Kevin J. Chen

IEEE Transactions on Industrial Electronics（2022）

引用 5|浏览5

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摘要

A 650-V/84-mΩ normally-off GaN/SiC cascode device is demonstrated with systematic static and dynamic characterizations. The cascode device features a low-voltage enhancement-mode (E-mode) gallium nitride (GaN) high electron mobility transistor (HEMT) to enable normally-off gate control, and a 650-V normally-on silicon carbide (SiC) JFET provides the hig...

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关键词

Silicon carbide,JFETs,HEMTs,Switches,Logic gates,MOSFET,Performance evaluation

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