A 2.2μm stacked back side illuminated voltage domain global shutter CMOS image sensor

Geunsook Park, Alan Chih-Wei Hsuing,Keiji Mabuchi,Jingming Yao,Zhiqiang Lin,Vincent C. Venezia,Tongtong Yu,Yu-Shen Yang,Tiejun Dai,Lindsay A. Grant

international electron devices meeting（2019）

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摘要

This paper presents a 2.2μm pixel pitch back side illuminated (BSI) Voltage Domain Global Shutter (VDGS) image sensor with Stacked Pixel Level Connection (SPLC) and full backside Deep Trench Isolation (DTI). With these cutting edge technologies, Full Well Capacity (FWC) more than 12,000 electrons and parasitic light sensitivity (PLS) larger than 100 dB are reached. A 38% Quantum Efficiency (QE) and 60% of Modulation Transfer Function (MTF) at 940nm, half Nyquist frequency (Ny/2) is demonstrated.

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关键词

stacked back side illuminated voltage domain global shutter CMOS image sensor,BSI VDGS image sensor,stacked pixel level connection,SPLC,full backside deep trench isolation,DTI,full well capacity,FWC,parasitic light sensitivity,PLS,quantum efficiency,QE,modulation transfer function,MTF,size 2.2 mum,size 940.0 nm,efficiency 38 percent

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