A time-continuous bus-feedback LIN transceiver in 0.14 µm high-voltage SOI CMOS

This paper presents a novel LIN transceiver designed and fabricated in a 0.14 µm high-voltage SOI CMOS technology that uses a time-continuous bus-feedback technique. The architecture of the LIN transceiver takes advantage of the advanced BCD process as a waveshaping DAC uses a dense control logic circuit while the high-voltage capability enhances the robustness of the transmitter and the receiver. The bus-feedback technique allows to reproduce the shape of a low-EME signal on the LIN bus and to be insensitive to bus-load variations. The architecture, and the feedback loop in particular, are designed to be robust against severe RF disturbances so that both low EME and high EMI can be achieved on LIN and battery supply nodes. EMC performance was evaluated according to automotive industry standards. Excellent EME and EMI compliance with German car OEMs requirements was achieved.