sSi/Si(0.5)Ge(0.5)/sSOI量子井戸p‐MOSFETに対するCoulomb散乱の研究【Powered by NICT】Wen Jiao,Liu Qiang,Liu Chang,Wang Yize,Zhang Bo,Xue Zhongying,Di Zengfeng,Yu Wenjie,Zhao Qing-TaiJournal of Semiconductors(2016)引用 0|浏览3暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要