K Repair and RC Improvement in 28nm Logic Devices and Beyond
ECS transactions(2014)
摘要
As interconnects continue to scale, enabling faster device speed and lower power consumption by reducing the κ value (capacitance) of each insulating dielectric layer becomes more imperative. Low-κ dielectrics are exposed to many process steps in fabricating a multiple-metal-layer structure, and must then withstand the stresses of packaging and assembly. The Applied Producer ® Onyx™ chamber is a newly-developed chamber for κ repair treatment in logic devices at 28 nm and beyond. The novel Onyx process and its mechanism are discussed by FTIR analysis. K repair and RC improvement are also demonstrated.
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