Electrical Characterization and Materials Stability Analysis of ${ m La}_{2}{ m O}_{3}/{ m HfO}_{2}$ Composite Oxides on n- ${ m In}_{0.53}{ m Ga}_{0.47}{ m As}$ MOS Capacitors With Different Annealing Temperatures

In this letter, a high-k composite oxide composed of La2O3 and HfO2 is investigated for n-In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3(0.8 nm)/HfO2(0.8 nm) on InGaAs with post deposition annealing at 500°C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (Dit) of 7.0×1011 cm-2eV-1, small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.