Efficient Light Emission from Hexagonal SiGe

E.M.T. Fadaly, J.R. Suckert, D. Ziss,M.A.J. v. Tilburg, C. Mao,Y. Ren, V.T. v. Lange, S. Köling,M. A. Verheijen, D. Busse, C. Rödl,J. Furthmüller,F. Bechstedt,J. Stangl,J. J. Finley,S. Botti,J.E.M. Haverkort,E.P.A.M. Bakkers

2021 Silicon Nanoelectronics Workshop (SNW)（2021）

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摘要

Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices. Here, we show that we can create a direct band gap in Si _1-x Ge _x alloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65<;x<;1. Hex-Si _1-x Ge _x alloys have been fabricated and efficient light emission has been observed.

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关键词

optoelectronic devices,direct band gap,crystal structure,DFT calculations,light emission,indirect band gap,silicon,germanium,optical transition,SiGe

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