A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application

Jingrui Guo,Kaizhen Han,Subhali Subhechha,Xinlv Duan,Qian Chen,Di Geng,Shijie Huang,Lihua Xu,Junjie An,Gouri Sankar Kar,Xiao Gong,Lingfei Wang,Ling Li,Ming Liu

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

Extremely scaled amorphous In-Ga-Zn-O thin film transistors (a-IGZO TFTs) can meet the increasing demand of high-density and low-power in DRAM design. Traditional percolation mechanism (PM) in a-IGZO TFTs compact model is done for infinite disordered systems, leading to error for scaled devices. To address this, a surface potential and physics-based compact model is proposed accounting for the eff...

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关键词

Solid modeling,Analytical models,Logic gates,Predictive models,Capacitance,Data models,Threshold voltage

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