Negative Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

Negative bias-stress and total-ionizing-dose (TID) effects in deeply scaled Ge-GAA nanowire devices are characterized for different biasing conditions. Negative bias-stress-induced degradation in Ge GAA device originates primarily from interface- and border-trap generation. Devices stressed at high gate voltage show rapid initial degradation and quick saturation dominated by interface-trap generation. Radiation-induced off-state leakage current in Ge GAA nanowires increases with dose due to enhanced band-to-band tunneling caused by charge trapping in the shallow trench isolation (STI).