Piezo-phototronic intersubband terahertz devices based on layer-dependent van der Waals quantum well

Piezo-phototronic effect on intersubband transition of valence band is studied by the hybrid kp theory tight-binding model approach. Piezoelectric properties of multilayer MoS2 show the layer-dependent behaviors, which offer new way to design quantum well by strain induced polarization. In this work, we design a kind of van der Waals quantum well based on multilayer MoS2. The intersubband transition energy can be regulated within terahertz by strain. The transition strength is studied by calculating oscillator strength. The novel structures not only offer a new degree of freedom for piezotronic and piezo-phototronic materials and devices, but also pave a new way to design optoelectronic nanoscale devices.