Electrical transport properties of atomically thin WSe₂ using perpendicular magnetic anisotropy metal contacts

Tungsten diselenide, WSe2, shows excellent properties and becomes a very promising material among two-dimensional semiconductors. Wide bandgap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it an efficient material for spintronics, optoelectronics, and valleytronics applications. In this work, we report electrical transport properties of a monolayer WSe2 based field effect transistor with most needed multilayer Co/Pt ferromagnetic electrodes exhibiting perpendicular magnetic anisotropy. We studied contact behavior by performing I-V curve measurements and estimating Schottky barrier heights (SBHs). SBHs estimated from experimental data are found to be comparatively small without using any tunnel barrier. This work expands the current understanding of WSe2 based devices and gives insight into the electrical behavior of Co/Pt metal contacts, which can open great possibilities for spintronic/valleytronic applications.