Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBEChristian Wurm,Henry Collins,Nirupam Hatui,Weiyi Li,Shubhra Pasayat,Robert Hamwey,Kai Sun,Islam Sayed,Kamruzzaman Khan,Elaheh Ahmadi,Stacia Keller,Umesh MishraJournal of Applied Physics(2022)引用 5|浏览11暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要