Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage ( $\text{V}_{\text {th}}$ ) more than 2.5 V and a low on- resistance of $5.5\Omega \cdot $ mm have been achieved by an improved regrowth technique with in-situ SiNx pass...