Disorder‐Induced Broadband‐Distributed Bragg Reflectors in Dielectric and Nanoporous GaN Systems

Distributed Bragg reflectors (DBRs) are the key building blocks of various optoelectronic and photonics devices. Broadband DBRs in the visible spectral range using the concept of Anderson localization of light in a disordered system are presented. The results demonstrate a approximate to 2.5X (from approximate to 80 to approximate to 200 nm) enhancement of the stopband width for a random DBR compared with a periodic DBR with the same configuration for both dielectric and nanoporous GaN material systems. The described method is beneficial for various applications, including air-guiding waveguides and light-emitting diodes with improved light-extraction efficiency.