In Situ Atomic‐Scale Observation of Monolayer MoS₂ Devices under High‐Voltage Biasing via Transmission Electron Microscopy (Small 7/2022)

MoS2 Devices In article number 2106411, Wen-Wei Wu and co-workers reveal the direct observation of an MoS2 device under biasing via powerful in situ transmission electron microscopy (TEM). During in situ TEM biasing, the MoS2 is etched vertically and horizontally; the former is dominated by knock-on damage, while the latter involves atomic migration induced by Joule heating. Also, the long cracks that form by thermal stress, which are discovered in both in situ and ex situ biasing at 10 V, are discussed in this research. It is believed that insights of material damage can push the limit of material properties and broaden the range of MoS2-based device applications.