A High Dynamic Range 128 × 120 3-D Stacked CMOS SPAD Image Sensor SoC for Fluorescence Microendoscopy
IEEE Journal of Solid-State Circuits(2022)
摘要
A miniaturized 1.4 mm
$\times \,\, 1.4$
mm,
$128\times120$
single-photon avalanche diode (SPAD) image sensor with a five-wire interface is designed for time-resolved fluorescence microendoscopy. This is the first endoscopic chip-on-tip sensor capable of fluorescence lifetime imaging microscopy (FLIM). The sensor provides a novel, compact means to extend the photon counting dynamic range (DR) by partitioning the required bit depth between in-pixel counters and off-pixel noiseless frame summation. The sensor is implemented in STMicroelectronics 40-/90-nm 3-D-stacked backside-illuminated (BSI) CMOS process with 8-
$\mu \text{m}$
pixels and 45% fill factor. The sensor capabilities are demonstrated through FLIM examples, including
ex vivo
human lung tissue, obtained at video rate.
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关键词
3-D stacking,chip-on-tip,CMOS image sensor (CIS),fluorescence lifetime imaging microscopy (FLIM),high dynamic range (HDR),microendoscopy,single-photon avalanche diode (SPAD),system-on-chip (SoC),time gating,time resolved
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