Fast Deposition of Microcrystalline Silicon Films Using The High-Density Microwave Plasma Utilizing a Spokewise Antenna

The high-density and low temperature microwave plasma utilizing a spokewise antenna was successfully applied to fast deposition of highly crystallized and photconductive microcrystalline silicon (μ-Si:H) films at low temperatures. The deposition rate and film crytstallinity significantly depend on the axial distribution of the plasma parameters. Best crystallinity was obtained at the axial distance Z from the quartz glass plate, where the spread of the ion beam energy impinging to the growing surface was minimum. By optimizing the axial distance Z and total pressure, highly crystallized μ-Si:H films could be fabricated with a high deposition rate of ∼47Å/s in the SiH 4 and Ar mixture plasma with no use of the H 2 dilution. An intentional control of the ion beam energy is also attempted using a mesh grid electrode to suppress the ion bombardment to the growing surface.