Electrical Characteristics of Dual Gate AlGaN/GaN High-Electron Mobility Transistors
2021 5th International Conference on Electrical Information and Communication Technology (EICT)(2021)
摘要
The impacts of a dual gate structure on the performance indices of an AlGaN/GaN HEMT are studied in this work. The dual gate arrangement aids in the positive shift of the threshold voltage, resulting in typically off functioning. Compared to a single gate device, our proposed structure boosted the threshold voltage by 27.27 percent while simultaneously increasing the transconductance. The device h...
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关键词
Logic gates,HEMTs,Electric variables,Threshold voltage,Wide band gap semiconductors,Power dissipation,Current density
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