A 40-nm, 2M-Cell, 8b-Precision, Hybrid SLC-MLC PCM Computing-in-Memory Macro with 20.5 - 65.0TOPS/W for Tiny-Al Edge Devices
2022 IEEE International Solid- State Circuits Conference (ISSCC)(2022)
摘要
Efficient edge computing, with sufficiently large on-chip memory capacity, is essential in the internet-of-everything era. Nonvolatile computing-in-memory (nvCIM) reduces the data transfer overhead by bringing computation closer, in proximity, to the memory [1]–[4]. While the multi-level cell (MLC) has higher storage density than the single-level cell (SLC). A few MLC or analog nvCIM designs had b...
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关键词
Phase change materials,Nonvolatile memory,Conferences,Computational modeling,Memory management,Data transfer,System-on-chip
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