Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200 degrees C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165 degrees C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.