Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric Memory

Yannan Xu,Yang Yang,Shengjie Zhao,Tiancheng Gong,Pengfei Jiang,Yuan Wang,Peng Yuan,Zhiwei Dang,Yuting Chen,Shuxian Lv,Yaxin Ding,Yan Wang,Jinshun Bi,Qing Luo

IEEE Transactions on Electron Devices（2022）

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摘要

In this article, we presented a new concept of ferroelectric (FE) modulated antiferroelectric (AFE) memory with independent two-step state switching and large polarization as a promising option for multibit storage in advanced technology nodes. Based on the Landau–Ginzburg–Devonshire (LGD) theory, four nonvolatile states of AFE with the built-in field can be obtained, and the step-by-step switchin...

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关键词

Iron,Switches,Nonvolatile memory,Electrodes,Shape,Switching circuits,Reliability engineering

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