Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress

The impact of mechanical stress (MS) on MOSFET gate-induced drain leakage (GIDL) current is investigated. The tests were performed on planar short-channel p- and n-type MOSFETs. Vertical compressive MS was induced in the devices by applying a vertical load with a nanoindenter. The applied stress was ranging from several hundred MPa to a GPa range, estimated by finite-element modeling. It is report...