Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments

Alexis C. Vilas Bôas,M. A. A. de Melo,R. B. B. Santos,R. Giacomini,N. H. Medina,L. E. Seixas,S. Finco,F. R Palomo, A. Romero-Maestro,Marcilei A. Guazzelli

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2019）

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摘要

The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.

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关键词

Performance evaluation,Time-frequency analysis,Temperature distribution,Radiation effects,Switching frequency,Switches,X-rays

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