Ar-implanted vanadium dioxide thin film with the reduced phase transition temperature

O. Liubchenko,V. Kladko,V. Melnik, B. Romanyuk,O. Gudymenko, T. Sabov,O. Dubikovskyi, Z. Maksimenko, O. Kosulya,O. Kulbachynskyi

Materials Letters（2022）

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摘要

•VO2 films were grown by 3-step method: deposition, annealing and ion implantation.•MIT is reduced below 40 °C with high TCR value ∼ 10%/°C after Ar2+ implantation.•MIT parameters, strains and point defects are intertwined closely.

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关键词

Vanadium dioxide thin films,Metal-insulator transition,Ion implantation

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