Synthesis of GaSb-VDS thin film by electron beam physical vapour deposition and its electro-optical characterization as prerequisite for p-n device construction

III–V materials owing to have low effective masses, high mobilities and a direct band gap, exhibit suitability for both optoelectronic as well as tunnelling devices. Gallium Antimonide (GaSb), a III–V semiconducting compound, shows narrow band gap and high carrier mobility apposite for high-performance optoelectronics in the mid-IR range.