Fabrication and Individual Addressing of STT-MRAM Bit Array With 50 nm Full Pitch

Lei Wan,Tsai-Wei Wu,Neil Smith,Tiffany Santos,Goran Mihajlovic, Jui-Lung Li, Kanaiyalal Patel, Noraica D. Melendez,Bruce Terris,Jordan A. Katine

IEEE Transactions on Magnetics（2022）

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摘要

Spin-transfer torque (STT) magnetic random access memory (MRAM) is gaining commercial traction in low-density embedded and standalone memories, but the available market opportunities would grow exponentially if STT-MRAM could approach dynamic random access memory (DRAM) bit density. Of course, achieving DRAM density will require, among other things, demonstrating the ability to pattern MRAM bits a...

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关键词

Lithography,Magnetic tunneling,Etching,Fabrication,Resists,Milling,Ion beams

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