Finding Suitable Gate Insulators for Reliable 2D FETs

Theresia Knobloch,Yury Yu. Illarionov,Tibor Grasser

2022 IEEE International Reliability Physics Symposium (IRPS)（2022）

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摘要

Field-effect transistors (FETs) based on two-dimensional (2D) materials hold the promise to allow for ultimately scaled channel thicknesses of single monolayers. Due to their atomically small thicknesses, the gate control is enhanced while sizable mobilities in the 2D semiconductors are maintained. Thus, in recent years considerable research efforts have focused on 2D FETs and explored various 2D ...

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关键词

Atomic layer deposition,Field effect transistors,Two dimensional displays,Materials reliability,Logic gates,Insulators,Reliability engineering

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