Voltage Surges by Backside ESD Impacts on IC Chip in Flip Chip Packaging

Takuya Wadatsumi,Kohei Kawai,Rikuu Hasegawa,Takuji Miki,Makoto Nagata, Kikuo Muramatsu, Hiromu Hasegawa,Takuya Sawada, Takahito Fukushima,Hisashi Kondo

2022 IEEE International Reliability Physics Symposium (IRPS)（2022）

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摘要

Voltage surges induced by electrostatic discharge (ESD) impacts on the backside of an integrated circuit (IC) chip in flip-chip packaging potentially causes reliability problems and even leads to malfunctioning. On-chip voltage waveform monitor circuits on its frontside evaluate the surge as high as 200 mV when ESD gun at 200 V is discharged to the Si substrate backside through the contact resista...

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关键词

Semiconductor device measurement,Voltage measurement,Packaging,Electrostatic discharges,Silicon,Flip-chip devices,Surges

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