Identification of Interface States responsible for V TH Hysteresis in packaged SiC MOSFETs

M. Cioni,P. Fiorenza,F. Roccaforte,M. Saggio,S. Cascino,A. Messina,V. Vinciguerra,M. Calabretta, A. Chini

2022 IEEE International Reliability Physics Symposium (IRPS)（2022）

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摘要

We investigate the mechanism governing threshold voltage (VTH) hysteresis in packaged SiC MOSFETs. A double-ramp measurement method was employed for this scope, being able to accurately evaluate the time-dependent recovery of the positive VTH shift induced by the sweep-up of the gate voltage. Particularly, we studied the effect of the (i) gate driving voltage (VGH)...

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关键词

Temperature measurement,Temperature dependence,Voltage measurement,Silicon carbide,Atmospheric measurements,Logic gates,Particle measurements

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