Cu–S-based thermoelectric compounds with a sphalerite-derived disordered crystal structure
Journal of Solid State Chemistry(2022)
摘要
Low lattice thermal conductivity is observed in compounds having disordered atomic configurations in their crystal structures. At temperatures above 300 K, a Cu–S-based semiconducting compound, Cu3.1Nb0.25Sn0.9S4, with a sphalerite-derived disordered structure, exhibits thermal conductivity less than 1 W K−1 m−1. In this study, we synthesized and tested the thermoelectric properties of the hole-doped derivatives, Cu3.1Nb0.25−xTixSn0.9S4 (x = 0, 0.125, 0.25) and Cu3.1Ti0.1875Sn0.9S4, up to 673 K. The hole-carrier doping decreased the electrical resistivity, improving the power factor. Cu3.1Ti0.25Sn0.9S4 shows a dimensionless figure of merit ZT of 0.1/0.6 at 300/673 K due to its inherent low lattice thermal conductivity and improved power factor. The thermoelectric properties of the Cu3.1Nb0.25Sn0.9S4-based compounds were compared with those of Cu3SbS4-based compounds with an ordered arrangement of Cu atoms in a similar sphalerite-derived structure, showing that the disordered atomic arrangement is responsible for the enhanced scatterings of both phonons and electrons.
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关键词
Thermoelectric materials,Sulfide,Sphalerite-derived structure,Disorder
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