Electrical switching of a bistable moiré superconductor

Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements 1 – 4 , superconducting field-effect transistors (FETs) 5 – 7 and gate-tunable qubits 8 – 10 . Superconducting FETs operate through continuous tuning of carrier density, but no bistable superconducting FET, which could serve as a new type of cryogenic memory element, has been reported. Recently, gate hysteresis and resultant bistability in Bernal-stacked bilayer graphene aligned to its insulating hexagonal boron nitride gate dielectrics were discovered 11 , 12 . Here we report the observation of this same hysteresis in magic-angle twisted bilayer graphene (MATBG) with aligned boron nitride layers. This bistable behaviour coexists alongside the strongly correlated electron system of MATBG without disrupting its correlated insulator or superconducting states. This all-van der Waals platform enables configurable switching between different electronic states of this rich system. To illustrate this new approach, we demonstrate reproducible bistable switching between the superconducting, metallic and correlated insulator states of MATBG using gate voltage or electric displacement field. These experiments unlock the potential to broadly incorporate this new switchable moiré superconductor into highly tunable superconducting electronics.