Characterization of Double HfZrO 2 based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)(2022)
摘要
A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memor...
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关键词
Low voltage,Power demand,Nonvolatile memory,Memory management,Voltage,Very large scale integration,FeFETs
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