Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)

S. Z. Rahaman, Y.-J. Chang, Y.-C. Hsin,S.-Y. Yang, F.-M. Chen, K.-M. Chen, I-J. Wang, H.-H. Lee, G.-L. Chen, Y.-H. Su, C.-Y. Shih, S.-C. Chiu, J.-H. Wei, S.-C. Yen,K.-C. Huang,C.-C. Chen, M.-C. Chen, S.-S. Sheu, W.-C. Lo,S.-Z. Chang, Y.-C. See, D.-L. Deng, C.-I Wu

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2022）

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摘要

We demonstrate highly manufacturable, reliable, and energy-efficient SOT-MRAM by developing damage-free reactive-ion etching (RIE) recipes. The experimental results demonstrate that C-F Etch lowers the CoFeB/MgO interfacial anisotropy, partially destroys the magnetic moment of CoFeB, and the post-etch annealing further degrades the magnetic moment. On the other hand, N-H Etch hardly changes the st...

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关键词

Resistance,Annealing,Magnetic multilayers,Semiconductor device reliability,Switches,Magnetic moments,Magnetic hysteresis

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