Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications

Hansheng Ye,Chunlei Wu,Nivedhita Venkatesan,Jingshan Wang,Yu Cao,Andy Xie,Edward Beam,Patrick Fay

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2022）

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摘要

GaN based high-electron-mobility transistors (HEMTs) have been widely investigated for RF applications because of their high electron mobility and high two-dimensional electron gas (2DEG) density. The combination of GaN based HEMTs and ferroelectric gate stacks can potentially improve device characteristics relevant to RF switch applications by utilizing the abrupt ferroelectric polarization switc...

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关键词

Radio frequency,Switches,HEMTs,Logic gates,Very large scale integration,Length measurement,Electron mobility

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