Si Metal-Oxide-Semiconductor and Si/SiGe Heterostructure Quantum Dots

Yu-Jui Wu,Chih-Ying Chiang,Hung-Yu Tsao, Tsung-Ying Li,Tz-Ming Wang,Min-Jui Lin,Chia-You Liu,Ching-Chen Yeh,Cheng-Hsueh Yang,Chi-Te Liang,Jiun-Yun Li

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2022）

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摘要

In this work, we demonstrate Coulomb blockade for both Si metal-oxide-semiconductor (MOS) nanowire and Si/SiGe heterostructure finger-type quantum dots (QDs). Clear quantum oscillations of the QD conductance were observed at temperatures of 23 mK to 1.5 K. Charge stability diagrams with unambiguous boundaries were also demonstrated at 23 mK.

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关键词

Electric potential,Quantum dots,Logic gates,Very large scale integration,Capacitance,Silicon,Stability analysis

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