Research on Degradation Characteristics of GaN-based LD

Abstract In recent years, GaN-based semiconductor laser diode(LD) have become an ideal light source for laser display, because of their high power and unique luminous wavelength. However, there is a challenge about reliability of GaN-based LD in industrial application. In this paper, an accelerated aging test is conducted on the same group of GaN-based LD at a high current of 4.1A. The degradation rate of GaN-based LD is obtained by least square method. Besides, the optical characteristics and low frequency electrical noise of LD are analysed after degradation. The results show that the lasing wavelength and low frequency electrical noise of GaN-based LD will increase after degradation. This helps to provide experimental reference for degradtion research of GaN-based LD.