A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge -on- Si Using HZO Internal Voltage Amplification

There are vital challenges to harness the unique assets of germanium (Ge) because of Ge-on-insulator (GeOI) processing issues. The advances in molecular beam epitaxy (MBE) technology have enabled the defect-free growth of atomic-level Ge stacks over the standard monolithic silicon platform to leverage the properties of the Ge as a channel layer. Here, we present the first ever report on the author...