CARRIER TRANSPORT MECHANISMS IN ION-IMPLANTED SILICON-ON-INSULATOR STRUCTURES WITH InSb CLUSTERS

In this paper, we examine carrier transport mechanisms in Silicon-on-Insulator (SOI) structures, containing InSb nanoparticles in SiO2 layer, before and after annealing at 1273 K. The comparison of temperature dependences of current-voltage (I-V) characteristics allowed us to determine the mechanisms of carrier transport (hopping and zonelike) in this nanostructures and estimate some transport parameters in the temperature range of 2-300 K. The measurements have confirmed the presence of Fouler-Nordheim and hopping mechanism contributions into lowtemperature I-V characteristics of the studied SOI structures.