Highly Uniform VCSELs Grown by Multi-wafer Production MBE

To address the rapidly growing Vertical-cavity surface-emitting lasers (VCSELs) market, we have developed a production Molecular Beam Epitaxy (MBE) platform capable of producing high quality VCSEL epi wafers. Epitaxy growth by MBE offers the advantage of more abrupt interfaces compared to other epitaxy growth techniques. This is particularly attractive for the growth of higher performance VCSEL device structures, which often require more precise control of the interfaces to achieve higher performance. Example includes high speed 850 nm VCSEL for data comm and 940 nm VCSEL for high power applications. A multiwafer production MBE optimized for VCSEL growth was successfully developed based on a Riber 6000 platform. Less than 0.4% uniformity across the platen was achieved by optimizing MBE reactor configuration and growth condition.