Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe2

The development of commercially available flexible and wearable devices requires low‐operating‐voltage circuit and resistive random access memory (RRAM). This paper reports the preparation and performances of low‐operating‐voltage RRAM based on the interlayer‐spacing regulation of MoSe2. Twine‐jumble‐like MoSe2 clusters were synthesized via hydrothermal method. The average interlayer spacing in the clusters is higher than the value for bulk MoSe2 by 9.969%. The layer count of the MoSe2 sample predicted according to the experimental value of ωA1g−ωE2g1 in the Raman spectroscopy is 1.403 while it is 2 regarding the characteristic of A1g peak and the existence of B2g peak, which is inconsistent with the results of scanning electron microscope and transmission electron microscope. Calculation of van der Waals force reveals that the twine‐jumble‐like MoSe2 should not be considered as a bi‐layer (or few‐layer) crystal, but as a cluster consisting of a numerous monolayer crystals. Compared with the conventional nanosized MoSe2, the SET/RESET voltages of the RRAM device based on the monolayer MoSe2 clusters are decreased by 4–10 times while the switching ratio and endurance are increased by 2–40 and 2–10 times respectively, which is due to that the interstitial radius in the monolayer MoSe2 clusters is higher than that of a silver ion.